Dresden 2017 – scientific programme

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O: Fachverband Oberflächenphysik

O 8: 2D Materials Beyond Graphene I

O 8.6: Talk

Monday, March 20, 2017, 11:45–12:00, REC/PHY C213

Localized defect states in MoS₂ monolayers: Electronic and optical properties — •Jens Kunstmann, Tsegabirhan B. Wendumu, and Gotthard Seifert — Theoretische Chemie, TU Dresden, Germany

Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Here we study the impact of point and line defects on the electronic structure and optical properties of MoS₂ monolayers using density-functional methods. The different types of defects form electronic states that are strongly localized on the defect. The electronic structure of the monolayer system is quite robust and it is well preserved for point defect concentrations of up to 6%. The impact of point defects on the optical absorption for concentrations of 1% and below is found to be very small. For higher defect concentrations, molybdenum vacancies were found to quench the overall absorption and sulfur defects lead to sharp absorption peaks below the absorption edge of the ideal monolayer. For line defects, we did not find a considerable impact on the absorption spectrum. These results support recent experiments on defective transition metal chalcogenides. [Kunstmann, Wendumu, Seifert, phys. stat. sol. (b) (2016), doi:10.1002/pssb.201600645]