Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 82: Nanostructures at Surfaces: Graphene and Other Aspects
O 82.3: Vortrag
Mittwoch, 22. März 2017, 16:30–16:45, REC/PHY C213
Recent advances in Secondary Ion Mass Spectrometry in the Helium Ion Microscope — •Florian Vollnhals, David Dowsett, Jean-Nicolas Audinot, and Tom Wirtz — Advanced Instrumentation for Ion Nano-Analytics (AINA), Luxembourg Institute of Science and Technology (LIST), L-4422 Belvaux, Luxembourg
The Helium Ion Microscope (HIM) has become an ideal tool for imaging with an ultimate resolution down to 0.5 nm using He and nano-patterning of structures with sub 20 nm feature using Ne ions. [1]
As standard analytical techniques like EDX are are not compatible with HIM, we have developed a Secondary Ion Mass Spectrometry (SIMS) add-on for Zeiss' Orion Nanofab.[2] SIMS is based on the identification of characteristic secondary ions emitted due to the irradiation of a surface with a primary ion beam. As the probe size in the HIM is substantially smaller (both for He and Ne) than the sputtering interaction volume, the lateral resolution is limited only by fundamental considerations and not by the probe size. The available mass range of up to 500 amu in combination with a mass resolution greater than 400 allows for compositional analysis of nanoscale structures.
We will present our progress in instrumental and method development of HIM-SIMS as well as data obtained on the prototype systems. He and Ne ion beams will be shown to be viable primary species for SIMS, approaching the physical resolution limits of <20 nm.
[1] L. Scipioni et al., J. Vac. Sci. Technol. B 27 (2009), 3250
[2] T. Wirtz et al., in "Helium Ion Microscopy", Springer (2016), p. 297-323