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O: Fachverband Oberflächenphysik

O 86: Graphene: Electronic Properties, Structure and Substrate Interaction I

O 86.6: Vortrag

Donnerstag, 23. März 2017, 11:45–12:00, WIL A317

Epitaxial growth of graphene via flash annealing of SiC studied by STM, AFM and LEED — •Ismail Baltaci, Malte Schulte, Eugenia Wodopian, Patrick Mehring, and Carsten Westphal — Experimentelle Physik 1, TU Dortmund, Otto-Hahn-Straße 4, 44227 Dortmund

Due to its unique electronic and structural properties graphene is of particular interest for the semi-conductor industry, e.g. as a new material in transistor applications.

In this study we concentrate on an epitaxial growth based on cyclic heating of SiC by direct current, known as flash annealing. In order to yield large and homogeneous graphene layers multiple parameters have to be taken into account such as heating and cooling rates as well as the number of heating cycles.

Determining the number of graphen layers on SiC is achieved by utilizing Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and Low Energy Electron Diffraction (LEED). Especially the structural differences between buffer layer and graphen is visualized by STM and LEED measurements. Furthermore, we report on the growth mechanism of graphene.