Dresden 2017 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 37: Graphene Posters (joint session DS, DY, HL, MA, O, TT, organized by O)

TT 37.10: Poster

Tuesday, March 21, 2017, 18:30–20:30, P2-EG

Sulfur intercalation of epitaxial graphene on 6H-SiC(0001) — •Santha J. Panigrahi, Florian Speck, Adrian Schütze, Martina Wanke, and Thomas Seyller — Professur für Technische Physik, TU Chemnitz, Reichenhainer Str. 70, D-09126 Chemnitz, Germany

During the initial stages of the sublimation growth of epitaxial graphene on SiC(0001), a carbon-rich (6√3×6√3)R30^∘ reconstruction, also referred to as buffer layer (BL), is formed at the interface to the SiC. Despite being structurally graphene-like, covalent interaction with the topmost Si atoms of the substrate renders the BL electronically inactive. Upon intercalation, these bonds to the substrate are broken. The BL is decoupled from the SiC substrate and the electronic properties of graphene are restored.

In this contribution, we show that upon annealing in a CVD-like setup at temperatures between 600 and 850 ^∘C in the presence of sulfur, the BL can be decoupled from the SiC substrate. We investigate the sulfur intercalation employing a combination of experimental techniques such as X-ray photoelectron spectroscopy, low energy electron diffraction and atomic force microscopy to study chemical composition and structural properties.