Dresden 2017 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 51: Topological Insulators (joint session DS, HL, MA, O, TT, organized by MA)
TT 51.8: Vortrag
Mittwoch, 22. März 2017, 17:00–17:15, HSZ 401
Topological thin films of Bi and InBi coexisting on InAs(111) — •L Nicolai1,2,7, K Hricovini1,2, J-M Mariot1,3, M C Richter1,2, O Heckmann1,2, U Djukic1, T Balasubramanian4, M Leandersson4, J Sadowski4, J Denlinger5, I Vobornik6, J Braun7, H Ebert7, and J Minar7,8 — 1LPMS, UCP, Cergy, France — 2DSM-IRAMIS, Spec, Cea-Saclay, France — 3LCP-MR, UPMC Univ. Paris 06/CNRS, France — 4MAX-lab, Lund Univ., Sweden — 5ALS, Berkeley, USA — 6EST, Trieste, Italy — 7LMU Munich, Germany — 8Univ. of West Bohemia, Plzeñ, Czech Rep.
The Bi(111) surface is a prototype system that shows Rashba-split surface states. Theoretical studies [1] predicted non-trivial topological surface states appearing on a single bi-layer of Bi(111) and a more complex behavior was suggested for a variable film thickness as a function of the layer thickness [2]. This clearly indicates that the electronic properties of thin films of this material are quite complex and far from being fully understood. Here we present combined theoretical and ARPES studies on the electronic structure of Bi(111) films grown on InAs(111). Bi grows epitaxially on this substrate and a monocrystal of very high quality is obtained after depositing several monolayers. ARPES experiments on the samples prepared show several new electronic states not reported before. The one-step model of photoemission as implemented in the SPR-KKR package [3] allows us to identify pristine Bi bulk states coexisting with InBi surface states. [1] Wada et al., Phys. Rev. B 83,121310 (2011) [2] Liu et al., Phys. Rev. Lett. 107, 136805 (2011) [3] Braun, Rep. Prog. Phys. 59, 1267-1338 (1996)