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Dresden 2017 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 56: Poster Session: Low-Dimensional Systems

TT 56.11: Poster

Wednesday, March 22, 2017, 15:00–19:00, P2-OG4

Interface band engineering in LaAlO3/SrTiO3 heterostructures — •Judith Gabel1, Philipp Scheiderer1, Michael Zapf1, Martin Stübinger1, Christoph Schlueter2, Tien-Lin Lee2, Michael Sing1, and Ralph Claessen11Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Germany — 2Diamond Light Source Ltd., Didcot, United Kingdom

Novel two-dimensional electron systems at the interfaces of oxide heterostructures, as e.g. at the LaAlO3/SrTiO3 (LAO/STO) heterointerface, recently have attracted much attention. A key requirement for future applications is the controllability of the electronic interface properties. We show that these properties can be controlled in LAO/STO by the oxygen vacancy (VO) concentration which can in turn be adjusted during photoemission experiments by means of synchrotron light irradiation and simultaneous oxygen dosing. In detail, the VO concentration determines the density of mobile and trapped charge carriers as well as the band bending and alignment at the interface. We systematically investigate these properties on (001) and (111) oriented LAO/STO heterostructures with controlled VO concentrations by depth profiling the film and substrate core levels by means of angle-dependent hard X-ray photoelectron spectroscopy, while resonant soft X-ray photoemission is used to probe the interfacial valence band states.

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