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TT: Fachverband Tiefe Temperaturen

TT 56: Poster Session: Low-Dimensional Systems

TT 56.13: Poster

Mittwoch, 22. März 2017, 15:00–19:00, P2-OG4

Tuning the electric interface properties of amorphous AlO_x/SrTiO₃ interfaces — •Berengar Leikert, Judith Gabel, Michael Sing, and Ralph Claessen — Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Germany

Two dimensional electron systems (2DESs) at the interfaces of oxide heterostructures are considered a promising platform for future microelectronic technology which may utilize the rich electronic behavior emerging at the interfaces of transition metal oxides. A simple and cost-effective method to create a 2DES is to deposit Al on the surface of SrTiO₃. It reduces the first oxide layers and leads to an n-doping of the oxide surface. By changing the Al redox potential via growth in oxygen atmosphere we can tune the electronic interface properties, which are probed by x-ray photoelectron spectroscopy of the film as well as the substrate core levels. Complementary transport experiments yield information about charge carrier concentration and mobility which are also shown to depend on the Al redox potential. Comparing the results from spectroscopy to the transport measurements for samples with differing carrier mobility and concentration we gain a deeper understanding of the properties governing transport at transition metal oxide interfaces.