Dresden 2017 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 66: Graphene: Electronic Properties, Structure and Substrate Interaction I (joint session DY, DS, HL, MA, O, TT, organized by O)

TT 66.3: Talk

Thursday, March 23, 2017, 11:00–11:15, WIL A317

Characterization of CVD-grown graphene on germanium at the atomic scale — •Andreas P. Becker, Wolfang M. Klesse, Mindaugas Lukosius, and Thomas Schroeder — IHP microelectronics GmbH, Frankfurt (Oder), Germany

Graphene is a two-dimensional carbon allotrope where the atoms are arranged in a honeycomb lattice. Especially its extraordinarily high carrier mobility, plasmonic activity and impermeability make it a promising candidate for novel applications in microelectronics, such as high-frequency transistors, sensors and optical modulators.

Direct growth of graphene on silicon is hampered by the formation of covalent bonds. CVD growth of high-quality graphene on transition metal substrates and subsequent transfer of the sheets has proved feasible, however, tenacious metallic contamination obstructs its use in the front-end-of-line of CMOS technology.

As a resort, graphene can be grown on germanium buffer layers, which is one current research focus of the IHP. Specifically, samples grown in the cleanroom are already being routinely investigated by e. g. scanning electron microscopy (SEM) and Raman spectroscopy. But only scanning probe microscopy (SPM) allows to scrutinize graphene layers at the atomic scale and can therefore be an essential complement to such established methods of quality assessment on larger scales.

Accordingly, I will present our latest results on the ex- and in-situ structural characterization of such gr/Ge structures by means of SPM depending on the growth parameters and post-growth annealing procedures.