Dresden 2017 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 74: Graphene: Electronic Properties, Structure and Substrate Interaction II (joint session DY, DS, HL, MA, O, TT, organized by O)
TT 74.8: Talk
Thursday, March 23, 2017, 16:45–17:00, TRE Ma
Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy — •Johannes Jobst1,2, Alexander J. H. van der Torren1, Eugene E. Krasovskii3, Jesse Balgley2, Cory R. Dean2, Rudolf M. Tromp4,1, and Sense Jan van der Molen1 — 1Leiden Institute of Physics, Leiden University, The Netherlands — 2Department of Physics, Columbia University, New York, USA — 3Departamento de Fisica de Materiales, Universidad del Pais Vasco UPV/EHU, San Sebastian/Donostia, Spain — 4IBM T.J. Watson Research Center, Yorktown Heights, USA
High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle- resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.