Dresden 2017 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 85: Graphene: Adsorption, Intercalation and Other Aspects (joint session DY, DS, HL, MA, O, TT, organized by O)

TT 85.5: Vortrag

Freitag, 24. März 2017, 11:30–11:45, TRE Ma

Substrate topography and annealing of Co/Gr/SiC(0001) investigated by means of photoemission electron microscopy — •Richard Hönig, Philipp Espeter, Peter Roese, Karim Shamout, Hermann Kromer, Ulf Berges, and Carsten Westphal — Experimentelle Physik I, TU Dortmund, Otto-Hahn-Straße 4a, 44227 Dortmund, Germany

The realization of carbon electronics requires semiconducting substrates, therefore epitaxial graphene on silicon carbide is a promising candidate. Challenges with this system are the covalently bonded buffer layer impacting the electronic properties, and the limited graphene grain size depending on the preparation conditions.

Here, the so-called confinement controlled sublimation is applied to yield a high grain size. The characterization of the samples has been carried out by photoemission electron microscopy (PEEM) which combines surface sensitivity with a mesoscopic resolution and unique contrast mechanisms. Images of samples prepared under high vacuum or under inert gas conditions are presented.

In order to decouple the buffer layer as well as for tailoring the properties of this multilayer system, the intercalation of metals underneath graphene is a common method. Consequently, we will present the first attempts of cobalt intercalation.