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A: Fachverband Atomphysik
A 23: Trapped ions
A 23.1: Hauptvortrag
Mittwoch, 8. März 2017, 14:30–15:00, N 3
Surface-electrode traps for scalable quantum information processing with atomic ions — •C. Ospelkaus1,2, H. Hahn1,2, M. Wahnschaffe2,1, G. Zarantonello1,2, T. Dubielzig1, S. Grondkowski1, J. Morgner1,2, M. Kohnen2,1, and A. Bautista-Salvador2,1 — 1Institut für Quantenoptik, Leibniz Universität Hannover — 2Physikalisch-Technische Bundesanstalt, Braunschweig
Surface-electrode traps have emerged as a scalable platform for quantum information processing with trapped ions. We describe concepts and experiments aimed at implementing multi-qubit operations in such structures using near-fields from embedded microwave conductors rather than the commonly used focsed laser beams. We describe the design and operation of a trap structure allowing the implementation of entangling quantum logic gates and spin-spin interactions for quantum simulations with 9Be+ ions. We demonstrate agreement between simulations of the near-field and measurements using a single ion as a quantum sensor at the sub-micron and few-degree level. We demonstrate motional sideband transitions as a prerequisite for entangling quantum logic operations and show microwave sideband cooling. We have set up a cryogenic ion trap system based on an ultra-low vibration (<20 nm 0-pk) closed cycle cryostat. This will eliminate the main source of infidelities in recent experiments, which was anomalous motional heating. Furthermore, we have extended our fabrication capability to include multiple metal layers with interconnects and discuss how such multi-layer structures would allow the realization of quantum simulations in scalable surface-trap arrays.