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Q: Fachverband Quantenoptik und Photonik
Q 11: Quantum Optics II
Q 11.1: Vortrag
Montag, 6. März 2017, 17:00–17:15, P 5
Electro-optic polarization modulators for on-chip integration in LiNbO3 based advanced quantum circuits — •Sebastian Brauner1, Polina Sharapova2, Harald Herrmann1, Raimund Ricken1, Torsten Meier2, and Christine Silberhorn1 — 1Universität Paderborn, Integrierte Quantenoptik, Warburger Str. 100, D-33098 Paderborn — 2Universität Paderborn, Computational Optoelectronics and Photonics, Warburger Str. 100, D-33098 Paderborn
Polarization modulation is of key importance for various kinds of quantum processing with single photons. Advanced integrated quantum circuits require compact and reliable modulators which can be directly implemented on-chip.
We demonstrate a wavelength selective integrated electro-optically driven polarization modulator in periodically poled z-cut lithium niobate (PPLN). The operation principle relies on an electrical field driven TE-TM conversion in a Ti-indiffused waveguide exploiting the r51 coefficient of the electro-optic tensor. Poling periods in the range of 20 µm enable the required phase-matching for wavelengths in the range of 1.5 µm. Complete conversion, i.e. TE to TM or vice versa, is obtained in our 7.5 mm long waveguide with 21.5 V drive voltage in a spectral bandwidth of 3.2 nm.
Besides experimental investigations using classical light for device characterization, we present detailed theoretical and experimental studies in the quantum regime in particular for biphoton wave packets generated e.g. via parametric down-conversion in the same chip.