Mainz 2017 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 26: Quantum Optics IV
Q 26.5: Vortrag
Dienstag, 7. März 2017, 15:30–15:45, P 5
Photoluminescence excitation spectroscopy of SiV− and GeV− color center in diamond — •Stefan Häußler1, Andreas Dietrich1, Gergo Thiering2, Junichi Isoya3, Takayuki Iwasaki4, Adam Gali2, Fedor Jelezko1, and Alexander Kubanek1 — 1Institute for Quantum Optics, Ulm University, D-89081 Ulm, Germany — 2Wigner Research Centre for Physics, Budapest, Hungary — 3Research Center for Knowledge Communities, Tsukuba, Japan — 4Tokyo Institute of Technology, Tokyo, Japan
Color centers in diamond and in particular the NV center have been proved to be good candidates for the realization of protocols for quantum information and quantum sensing. Recently the negatively charged silicon-vacancy (SiV−) and germanium-vacancy (GeV−) defects have drawn attention due to their exceptional optical properties. For SiV− a comparably large DW factor, a very small inhomogeneous line broadening and a large spectral stability has been demonstrated, facilitating efficient generation of indistinguishable photons. Understanding the electronic level structure is of fundamental interest for future quantum optics experiments based on the two color centers.
We present photoluminescence (PL) and excitation (PLE) measurements for both, an ensemble of negatively charged SiV and GeV centers at room temperature using a costum build confocal microscope. We measured PLE spectra over a broad wavelength range from 460 to 650 nm and performed saturation spectroscopy with high power density laser to investigate the electronic level structure of the two color centers comparing our results with in-depth theoretical simulations.