Mainz 2017 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 44: Photonics II
Q 44.1: Talk
Thursday, March 9, 2017, 11:00–11:15, P 11
Amorphous silicon-doped titania films for on-chip photonics — •Thomas Kornher1, Kangwei Xia1, Roman Kolesov1, Stefan Lasse1, Cosmin S. Sandu2, Estelle Wagner2, Scott Harada2, Giacomo Benvenutti2, Bruno Villa4, Hans-Werner Becker3, and Jörg Wrachtrup1 — 13. Physikalisches Institut, Universität Stuttgart, Germany — 23D-OXIDES, Saint Genis Pouilly, France — 3RUBION, Ruhr-Universität Bochum, Germany — 4Semiconductor Physics Group, Cambridge, UK
High quality optical thin film materials form a basis for on-chip photonic micro- and nano-devices, where several photonic elements form an optical circuit. Their realization generally requires the thin film to have a higher refractive index than the substrate material. Here, we demonstrate a method of depositing amorphous 25% Si doped TiO2 films on various substrates, a way of shaping these films into photonic elements, such as optical waveguides and resonators, and finally, the performance of these elements. The quality of the film is estimated by measuring thin film cavity Q-factors in excess of 105 at a wavelength of 790 nm, corresponding to low propagation losses of 5.1 db/cm. The fabricated photonic structures were used to optically address chromium ions embedded in the substrate by evanescent coupling, therefore enabling it through film-substrate interaction. Additional functionalization of the films by doping with optically active rare-earth ions such as erbium is also demonstrated. Thus, Si:TiO2 films allow for creation of high quality photonic elements, both passive and active and provide access to a broad range of substrates and emitters embedded therein.