Münster 2017 – scientific programme

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T: Fachverband Teilchenphysik

T 12: Neutrinophysik 2 (Doppelbetazerfall)

T 12.3: Talk

Monday, March 27, 2017, 17:20–17:35, VSH 118

Characterization of a VUV-sensitive Silicon Photomultiplier for the nEXO experiment — •Tobias Ziegler, Patrick Hufschmidt, Ako Jamil, Judith Schneider, Michael Wagenpfeil, Gisela Anton, and Thilo Michel — ECAP, Friedrich-Alexander-Universität Erlangen-Nürnberg

The future nEXO experiment will use about 4 m² of SiPMs for the detection of the VUV (vacuum ultraviolet) scintillation light (λ = 175 nm) from LXe to search for the neutrinoless double beta (0νββ) decay of ¹³⁶Xe. Besides suffering from correlated avalanches, such as crosstalk and afterpulsing, most commercially available SiPMs are not sensitive to UV light. The core criteria, for having an energy resolution of about 1 % (σ) at the Q-value of the 0νββ decay of ¹³⁶Xe at 2457.8 keV, are a photon detection efficiency (PDE) of at least 15 % at 175 nm and a correlated avalanche probability of less than 20 %. We present measurements with a new device dedicated to detect VUV light. These SiPMs were investigated at −100 ^∘C both in the absence of light as well as using Xe scintillation light with respect to the requirements by the nEXO experiment.