Münster 2017 – scientific programme
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T: Fachverband Teilchenphysik
T 67: Pixeldetektoren 3
T 67.4: Talk
Tuesday, March 28, 2017, 17:30–17:45, VSH 116
Characterization of Through Silicon Vias (TSVs) on the ATLAS Pixel Chip — Michael Daas, Florian Hinterkeuser, Fabian Hügging, •Nikolaus Owtscharenko, David-Leon Pohl, and Norbert Wermes — Physikalisches Institut der Universität Bonn
The high luminosity upgrade of the LHC requires new ATLAS detector systems. In particular the inner tracking system will be upgraded to an all-silicon detector covering an area of about 200m2, demanding new module technologies. New interconnection techniques allow area efficient optimisation module designs. A key element therein is the so-called through silicon via (TSV) applied through the FE-chip. It allows for minimized passive area, less or no wirebonds, and 4-side abuttable modules. We report on TSV fabrication and characterisation in a Bonn/IZM-Berlin collaboration.
Processing of a sample of FE-I4B bare chips, a readout chip for 26880 hybrid pixels designed in a 130nm CMOS process for use in the ATLAS IBL, has been completed.
In this talk the IZM via last process on ATLAS FE-I4B chips is presented with focus on via resistance and process yield.