Münster 2017 – scientific programme

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T: Fachverband Teilchenphysik

T 67: Pixeldetektoren 3

T 67.6: Talk

Tuesday, March 28, 2017, 18:00–18:15, VSH 116

Characterization of a depleted monolithic active pixel sensor prototype in 130nm Toshiba technology — •Christian Bespin, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Tetsuichi Kishishita, Hans Krüger, Piotr Rymaszewski, and Norbert Wermes — Physikalisches Institut der Universität Bonn

For future applications of pixel detectors in high luminosity environments such as the HL-LHC new demands for detectors arise. While dealing with high data rates they need to withstand high radiation doses and keep the material budget low. A promising approach are CMOS silicon devices which are expected to perform better in future experiments than present day hybrid pixel detectors. A prototype of a depleted monolithic active pixel sensor (DMAPS) in 130 nm Toshiba technology is characterized.

It consists of three different flavors with a pixel pitch of 20 μm and two with 40 μm pitch. The pixels are read out using a 3T circuit. Results from gain and noise measurements are presented together with measurements with radioactive sources and a 3.5 GeV electron beam.