Münster 2017 – scientific programme

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T: Fachverband Teilchenphysik

T 69: Halbleiterdetektoren (Strahlenschäden, neue Konzepte)

T 69.7: Talk

Tuesday, March 28, 2017, 18:15–18:30, VSH 11

Characterization results of a 50 um thin Depleted Monolithic Active Pixel Sensor (DMAPS) prototype in a 150 nm multiple well CMOS technology with backside processing and a high resistive bulk (ESPROS) — •Theresa Obermann, Tomasz Hemperek, Fabian Hügging, Hans Krüger, David-Leon Pohl, and Norbert Wermes — Physikalisches Institut, Bonn, D-53115

The DMAPS concept is a new monolithic pixel detector concept which integrates the front-end circuitry and the sensor on the same silicon substrate which can be fully depleted. The realization of prototypes of the DMAPS concept relies on the availability of multiple well CMOS processes and high resistive substrates. Two DMAPS prototypes were designed in the 150 nm process of the CMOS foundry ESPROS photonics and fabricated on a high resistive n-type wafer of 50 um thickness. The prototypes have 352 square pixels of 40 um pitch and small n-well charge collection node with very low capacitance (n+-implantation size: 5 um by 5 um) and about 150 transistors per pixel (CSA and discriminator plus a small digital part). The performance of the prototypes was studied before and after an irradiation with neutrons up to 5E14 neq. In this talk the final results of the characterization in the lab and beam test will be presented.