Berlin 2018 – wissenschaftliches Programm
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CPP: Fachverband Chemische Physik und Polymerphysik
CPP 13: Organic Electronics and Photovoltaics - Hybrid and Organic Layer Systems
CPP 13.1: Vortrag
Montag, 12. März 2018, 15:00–15:15, C 243
Electrical characterization of hybrid n-GaN/p-PEDOT structures for optoelectronic applications — •Linus Krieg1, Daniel Splith2, Zhipeng Zhang2, Holger von Wenckstern2, Marius Grundmann2, Florian Meierhofer1, Xiaoxue Wang3, Karen Gleason3, and Tobias Voß1 — 1Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology, Braunschweig University of Technology, 38092 Braunschweig — 2Felix-Bloch-Institut für Festkörperphysik, Halbleiterphysik, Linnéstr. 5, 04103 Leipzig — 3Department of Chemical Engineering, Massachusetts Institute of Technology, 02139 Cambridge
Hybrid structures consisting of both inorganic and organic conductive layers are promising for the development of inexpensive, versatile and tailored electronic and optoelectronic devices such as sensors or light emitting diodes (LEDs). We study the fabrication of planar n-GaN/p-PEDOT heterostructures. The p-polymer is grown via oxidative chemical vapor deposition (oCVD), a dry deposition approach that allows for controllable polymer deposition out of the gas phase while achieving conformal coverage of the substrate with a thickness control of the deposited polymer layer in the nanometer range. We analyze the temperature-dependent current-voltage characteristics of the hybrid GaN/PEDOT-structures to study the electronic properties of the hybrid interface. The results show a pronounced diode characteristic of the hybrid device and allow us to deduce the relevant conduction mechanisms. We deduce the saturation current of the device and develop a model of the band lineup hybrid n-inorganic/p-organic interface.