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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 46: Poster Session IV

CPP 46.20: Poster

Mittwoch, 14. März 2018, 11:00–13:00, Poster A

Charge carrier recombination in planar n-i-p and p-i-n perovskite solar cells - the role of interfaces — •D. Kiermasch¹, K. Tvingstedt¹, L. Gil-Escirg², C. Momblona², M. Sessolo², A. Baumann³, H. Bolink², and V. Dyakonov^1,3 — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany — ²Instituto de Ciencia Molecular, Universidad de Valencia, 46980 Paterna, Valencia, Spain — ³Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany

Charge carrier recombination processes in organo-metal halide perovskite solar cells are one of the most studied research topics in this new class of photovoltaic materials. Usually, time resolved photoluminescence (tr-PL) is used to study recombination in perovskite layers. Here, crystals or films with or without charge selective layers are being probed. In contrast, only a few experimental approaches have been presented on complete perovskite solar cells using charge selective layers and contacts.

We report on charge carrier recombination dynamics in planar n-i-p and p-i-n perovskite solar cells with different organic charge selective layers. The perovskite layers have been prepared by vacuum deposition leading to efficiencies in the range of 20% for the n-i-p and 17% for the p-i-n layout. To explain this difference between both type of devices we studied charge carrier recombination dynamics with steady state and transient electrical measurements demonstrating the importance of interface recombination in perovskite solar cells.