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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 46: Poster Session IV

CPP 46.22: Poster

Mittwoch, 14. März 2018, 11:00–13:00, Poster A

Interfacial charge transfer and temperature dependent charge carrier transport in organic heterostructure field-effect transistors — •Eduard Meister, Stefan Schmidt, and Wolfgang Brütting — Institute of Physics, University of Augsburg, Germany

In this work we studied interfacial charge transfer (CT) happening in hetero-structure field-affect transistors (FETs) based on vapour deposited small molecules. We used diindenoperylene (DIP) as donor (D) and N,N’-bis-(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDIR-CN₂) as acceptor (A) and fabricated D/A as well as A/D heterostructure FETs and used additionally two different contact materials, tetrathiafulvalene tetracyanoquinodimethane (TTF-TCNQ) and aluminum, for preferred hole and electron injection into DIP, respectively. DIP deposited on thermally treated and smoothed tetratetracontane [1] exhibits a electron as well as a hole field-effect mobility µ in the range of 0.1 cm²/Vs, whereas PDIR-CN₂ shows only e-transport with µ in the same range. As reported previously [2] partial ground state CT between DIP and PDIR-CN₂ molecules takes place resulting in significant changes in the transistor characteristics. In total, we have identified five different working regimes of heterostructure FETs. Temperature dependent measurements of the mobility in the donor and the acceptor indicate among others a significant difference between hole and electron transport in DIP.

[1] L. Pithan et al., J. Chem. Phys. 143 (2015) 164707.

[2] V. Belova et al. J. Am. Chem. Soc. 139 (2017) 8474.