Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II
DS 10.12: Talk
Monday, March 12, 2018, 18:00–18:15, E 020
Carrier mobility in crystalline MOVPE-Ga2O3-films — •Rüdiger Mitdank1, Robin Ahrling1, Martin Handwerg1, Günter Wagner2, Zbigniew Galazka2, and Saskia F. Fischer1 — 1AG Novel Matirials, Institut für Physik der Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
We demonstrate the results of Hall- and van-der-Pauw measurements for Si-doped ß-Ga2O3 MOVPE layers with a thickness 30nm < t < 230 nm between T = 50 K and 300 K. The homoepitaxial layers were grown on isolating substrates with Mg-doping. At high temperature T, the mobility is dominated by scattering of electrons at polar optical phonons, at low T by scattering at ionized impurities. A mobility limit for T = 300K and t >100nm of 140 (cm*cm)/Vs was found in the case of pure electron-phonon interaction. For t < 100 nm the mobility decreases strongly. The reduction of the carrier mobility due to surface scattering and propagation of electron waves in thin films is discussed.