Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II
DS 10.3: Talk
Monday, March 12, 2018, 15:30–15:45, E 020
Theoretical description of the current conduction thorough the Schottky barrier in SrTiO3/Pt based resistive switching devices — •Carsten Funck1, Christoph Bäumer2, Regina Dittmann2, Rainer Waser1,2, and Stephan Menzel2 — 1Institute für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52064 Aachen, Germany — 2Peter Grünberg Institut (PGI 7), Forschungszentrum Jülich, 52425 Jülich, Germany
The current transport across Schottky contacts is widely investigated in many fields of semiconductor technology. Often this current transport is described with a certain conduction mechanism, which connects the electrical current with an analytical equation. This analytical expressions are frequently used to explain the experimental current through resistive switching devices. Especially, the Schottky emission theory is often applied to SrTiO3 based thin film Schottky contacts. However, this proceeding leads often to physical inconsistencies. Therefore we developed an atomistic fully quantum mechanical model based on density functional theory combined with the non-equilibrium Green’s function formalism. This model will be underlined by single band transport simulations. As a conclusion of these models we will show that the often applied Schottky emission theory is insufficient to describe the electrical current in Nb:SrTiO3/SrTiO3−x/Pt based resistive switching devices. In contrast it will be shown that a thermally assisted tunneling process is responsible for the current transport across the interface, which crosses over into a direct tunneling for higher voltages.