Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II

DS 10.4: Talk

Monday, March 12, 2018, 15:45–16:00, E 020

Pulse kinetic study on HfO₂/TiO₂- bilayer resistive switching memories — •Felix Cüppers¹, Alexander Hardtdegen¹, Susanne Hoffmann-Eifert¹, Moritz von Witzleben², and Ulrich Böttger² — ¹PGI-7, Forschungszentrum Jülich GmbH, Germany — ²IWE II, RWTH Aachen University, Germany

Memristive devices based on ultrathin metal oxide layers are promising candidates for future information technology applications. Bilayer oxide stacks of HfO₂/TiO₂ exhibit enhanced switching stability [1] compared to the respective monolayers. However, the origin of the stability is not fully understood. Effects under discussion comprise the intrinsic current limitation by the titanium oxide layer as well as a change in the temperature management during switching. Furthermore, the influence of the intrinsic series resistor on the switching kinetics of the bilayer cell needs further exploration.

In this study, electrical characterization by pulse measurements of bilayer oxide stacks of HfO₂/TiO₂ is done. By variation of time, voltage, state resistance and pulse geometry, different regimes of cell performance are identified and characterized. These results allow a deeper understanding of the kinetics of resistively switching oxide bilayer stacks. [1] A. Hardtdegen et al., "Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO₂-Based Devices Determined from Current Compliance Series" 2016 IEEE 8th International Memory Workshop (IMW), Paris, 2016, pp. 1-4.