Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II

DS 10.5: Talk

Monday, March 12, 2018, 16:00–16:15, E 020

Electrode Influence on the Resistive Switching Performance in HfOx based RRAM Devices — •Benjamin Krah¹, Stefan Petzold¹, Ulhas Sharath¹, Eszter Piros¹, Tom Blomberg², Eric Jalaguier⁴, Marko Tuominen², Hessel Sprey³, Sophie Bernasconi⁴, Etienne Nowak⁴, Philipp Komissinskiy¹, Erwin Hildebrandt¹, and Lambert Alff¹ — ¹TU Darmstadt, Darmstadt, Germany — ²ASM Microchemistry Ltd., Helsinki, Finland — ³ASM Belgium, Leuven, Belgium — ⁴CEA Leti, Grenoble, France

Resistive switching random access memory (RRAM) is an intensively investigated candidate for DRAM and FLASH replacement. The resistance of an insulator, sandwiched between two electrodes, can be modified by an applied voltage generating a soft breakdown of the dielectric. Hafnium oxide (HfO2) based dielectrics are of high interest due to their proven CMOS compatibility. Recently, we have shown in a simple model device how to achieve all reported switching modes, including conductance quantization [1]. Here, we investigate in the same model device (Pt/HfO2/bottom electrode (BE) and Pt/HfOx/BE) the influence of electrode material on the switching variability and performance. As only additional parameter, the oxygen stoichiometry HfOx is varied. The tested bottom electrodes include TiN, TiWN, WN and W due to their applicability in the semiconductor industry. We found that strong oxygen getter electrodes tend to increase the switching variability and to reduce the reliability. The choice of electrode, therefore, is a crucial parameter for switching performance.

[1] S. U. Sharath et. al., Adv. Funct. Mater. 27, 1700432 (2017)