Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II

DS 10.7: Talk

Monday, March 12, 2018, 16:30–16:45, E 020

Filament growth and resistive switching in hafnium oxide memristive devices — •Sven Dirkmann¹, Jan Kaiser¹, Christian Wenger², and Thomas Mussenbrock³ — ¹Ruhr-Universität Bochum, Lehrstuhl für Theoretische Elektrotechnik, 44780 Bochum, Germany — ²IHP, 15239 Frankfurt (Oder), Germany — ³BTU Cottbus-Senfenberg, Lehrstuhl für Theoretische Elektrotechnik, 03046 Cottbus, Germany

Memristive nanostructures are devices that change their resistance when a voltage is applied to them and maintain their resistance when removing this voltage. In particular, HfO2 based RRAM devices are under investigation due to their scalability (< 10 nm), simple fabrication , fast switching speeds and their compatability with CMOS technology. Here, we report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive switching model for the device is proposed, based on important experimental and theoretical findings and validated using 2D and 3D kinetic Monte Carlo simulations. The model is coupled to a field solver and different current transport mechanisms as direct tunneling, trap assisted tunneling, ohmic transport, and transport through a quantum point contact have been taken into account. Important parameter, difficult to measure in experiments, as the shape of the conductive filament, width of the filament constriction, current density and temperature distribution, are calculated. We find that the numerical results are in excellent agreement with experimentally obtained data. This work is funded by the German Research Foundation DFG in the frame of Research Unit FOR2093.