Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II
DS 10.8: Vortrag
Montag, 12. März 2018, 17:00–17:15, E 020
Molecular beam epitaxy of Ga2O3 homoepitaxial (010) thin films — •Piero Mazzolini1, Charlotte Wouters2, Martin Albrecht2, and Oliver Bierwagen1 — 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
Due to some of its peculiar properties like its intrinsic wide bandgap (Eg = 4.8 eV) and the possibility to tune its transport properties, gallium oxide is recently attracting large interest especially in the field of power electronic devices. Nonetheless, the future application of Ga2O3 is connected to the possibility to obtain a deep control of its functional properties, i.e. limiting/controlling the presence of defects (e.g. doping). We here present a study on homoepitaxially grown β-Ga2O3 thin films via molecular beam epitaxy on (010)-oriented β-Ga2O3 substrates. We thoroughly study the effect of the in-situ surface cleaning, growth T and metal-to-oxygen flux ratio. The quality of the deposited gallium oxide homoepitaxial thin films is determined employing different in-situ (e.g. RHEED) and ex-situ (e.g TEM, AFM, XRD) characterization techniques.