Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 10: Oxide Semiconductors for Novel Devices (Focussed Session): Session II
Monday, March 12, 2018, 15:00–18:15, E 020
The class of semiconducting oxides includes low temperature processed amorphous thin films for bendable electronics and display technology as well as highly crystalline materials such as the wide band group-III sesquioxides being interesting for UV and DUV photo sensors, power electronics and even memristors. This session sets a focus on physical properties of such oxides, their growth methods and heterostructures for demonstrator devices. This focus session is supported by the Leibniz ScienceCampus GraFOx.
Organized by
Dr. Karsten Fleischer School of Physics, Trinity College Dublin, the University of Dublin Dublin 2, Ireland
Dr. Holger von Wenckstern Universität Leipzig Felix-Bloch-Institut für Festkörperphysik Halbleiterphysik Linnéstraße 5 04103 Leipzig, Germany
Prof. Dr. rer. nat. Holger Eisele Experimental Physics Technische Universität Berlin Department for Mathematics and Science Institute of Solid State Physics Hardenbergstr. 36, Sekr. EW 4-1, D-10623 Berlin, Germany
Dr. Oliver Bierwagen Paul-Drude-Institut für Festkörperelektronik (PDI) Hausvogteiplatz 5-7 10117 Berlin, Germany
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15:00 | DS 10.1 | Defect and interface formation in SrTiO3 homoepitaxial thin film growth — •Laura Bogula, Toni Markurt, Martin Albrecht, and Jutta Schwarzkopf |
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15:15 | DS 10.2 | The electric field dependence of the permittivity of SrTiO3 — •Julian Stoever, Laura Bogula, Toni Markut, Jos Boschker, Jutta Schwarzkopf, Martin Albrecht, and Klaus Irmscher |
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15:30 | DS 10.3 | Theoretical description of the current conduction thorough the Schottky barrier in SrTiO3/Pt based resistive switching devices — •Carsten Funck, Christoph Bäumer, Regina Dittmann, Rainer Waser, and Stephan Menzel |
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15:45 | DS 10.4 | Pulse kinetic study on HfO2/TiO2- bilayer resistive switching memories — •Felix Cüppers, Alexander Hardtdegen, Susanne Hoffmann-Eifert, Moritz von Witzleben, and Ulrich Böttger |
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16:00 | DS 10.5 | Electrode Influence on the Resistive Switching Performance in HfOx based RRAM Devices — •Benjamin Krah, Stefan Petzold, Ulhas Sharath, Eszter Piros, Tom Blomberg, Eric Jalaguier, Marko Tuominen, Hessel Sprey, Sophie Bernasconi, Etienne Nowak, Philipp Komissinskiy, Erwin Hildebrandt, and Lambert Alff |
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16:15 | DS 10.6 | Ab initio study of oxygen vacancy formation and migration in HfO2 under electric field — •Marta Gibertini, Daniel Wortmann, Gustav Bihlmayer, Shigeru Tsukamoto, and Stefan Blügel |
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16:30 | DS 10.7 | Filament growth and resistive switching in hafnium oxide memristive devices — •Sven Dirkmann, Jan Kaiser, Christian Wenger, and Thomas Mussenbrock |
| 16:45 | 15 min. break. | ||
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17:00 | DS 10.8 | Molecular beam epitaxy of Ga2O3 homoepitaxial (010) thin films — •Piero Mazzolini, Charlotte Wouters, Martin Albrecht, and Oliver Bierwagen |
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17:15 | DS 10.9 | Thermal Conductivity of β-Ga2O3 Bulk and thin Films — •Martin Handwerg, Robin Ahrling, Rüdiger Mitdank, Günter Wagner, Zbigniew Galazka, and Saskia F. Fischer |
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17:30 | DS 10.10 | Electronic Raman scattering in β-Ga2O3 — •Andreas Fiedler, Manfred Ramsteiner, Zbigniew Galazka, and Klaus Irmscher |
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17:45 | DS 10.11 | Analysis of the conductivity anisotropy of β-Ga2O3 using Van der Pauw measurenemts — •Christian Golz, Zbigniew Galazka, Fariba Hatami, W. Ted Masselink, and Oliver Bierwagen |
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18:00 | DS 10.12 | Carrier mobility in crystalline MOVPE-Ga2O3-films — •Rüdiger Mitdank, Robin Ahrling, Martin Handwerg, Günter Wagner, Zbigniew Galazka, and Saskia F. Fischer |