Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 11: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...): Session II
DS 11.1: Talk
Tuesday, March 13, 2018, 09:30–09:45, H 0111
Ni:SrTiO3 thin films — •Fatima Alarab1,2, Rostislav Medlin2, Lucie Prusakova2, Pavol Sutta2, Laurent Nicolai2, Christine Richter1, Karol Hricovini1, and Jan Minar2 — 1University of Cergy-Pontoise, Paris, France — 2University of West-Bohemia, New technologies research centre, Plzen, Czech Republic
Strontium titanate (SrTiO3, STO) is a bulk insulator with a band gap of 3,2eV in its cubic phase at room temperature. Specific properties of pure STO like very large dielectric constant and high resistivity make it an interesting material for different applications in microelectronics, optics and in advanced ceramics. By doping with transition metals or oxygen vacancies, STO becomes electrically conductive and the band gap width is modified. Here we report the fabrication, structure and electronic properties of Nickel doped STO (Ni:STO) thin films. The films with different Ni concentrations were prepared by reactive co-sputtering in reactive magnetron units using pure STO and Ni targets. X-ray diffraction, TEM, EELS and XPS techniques were used to characterized the effect of Ni concentration in STO on crystallinity and electronic properties as compared to pure STO. We performed as well calculation of the band structure using SPR-KKR package.