Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 13: Oxide Semiconductors for Novel Devices (Focussed Session): Session III

Dienstag, 13. März 2018, 09:30–11:30, E 020

The class of semiconducting oxides includes low temperature processed amorphous thin films for bendable electronics and display technology as well as highly crystalline materials such as the wide band group-III sesquioxides being interesting for UV and DUV photo sensors, power electronics and even memristors. This session sets a focus on physical properties of such oxides, their growth methods and heterostructures for demonstrator devices. This focus session is supported by the Leibniz ScienceCampus GraFOx.

Organized by

Dr. Karsten Fleischer School of Physics, Trinity College Dublin, the University of Dublin Dublin 2, Ireland

Dr. Holger von Wenckstern Universität Leipzig Felix-Bloch-Institut für Festkörperphysik Halbleiterphysik Linnéstraße 5 04103 Leipzig, Germany

Prof. Dr. rer. nat. Holger Eisele Experimental Physics Technische Universität Berlin Department for Mathematics and Science Institute of Solid State Physics Hardenbergstr. 36, Sekr. EW 4-1, D-10623 Berlin, Germany

Dr. Oliver Bierwagen Paul-Drude-Institut für Festkörperelektronik (PDI) Hausvogteiplatz 5-7 10117 Berlin, Germany

	09:30	DS 13.1	Hauptvortrag: Electron transport in beta-gallium oxide — •Rebecca L. Peterson, Zumrad Kabilova, and Cagliyan Kurdak
	10:00	DS 13.2	Hauptvortrag: Deep level defects in bulk and epi-grown β-Ga2O3 — •Lasse Vines
	10:30	DS 13.3	Hauptvortrag: Indium Oxide and its surface electrons – a model system to study gas interaction and metal/semiconductor junctions — •Marcel Himmerlich, Theresa Berthold, Jonas Michel, Simeon Katzer, and Stefan Krischok
	11:00	DS 13.4	Hauptvortrag: Phonons and excitons in Ga2O3 polytypes — •Markus R. Wagner