Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 15: Thermoelectric and Phase Change Materials
DS 15.2: Vortrag
Dienstag, 13. März 2018, 12:00–12:15, E 020
Intermixing of SnTe-GeTe superlattices grown by molecular beam epitaxy — •Kaminski Marvin1, Pohlmann Marc1, Meledin Alexander2, Cojocaru-Mirédin Oana1, and Wuttig Matthias1,3 — 1I. Institute of Physics, Physics of New Materials, RWTH Aachen University, 52056 Aachen, Germany — 2Gemeinschaftslabor für Elektronenmikroskopie, RWTH Aachen, 52074 Aachen, Germany — 3JARA-Insitut Energy-efficient information technology (PGI-10), FZ Jülich, 52428 Jülich, Germany
Since its first report in 2013 interfacial phase-change materials (IPCMs) attract plenty of attention. Classical phase change materials (PCM) on the one hand can be switched between the amorphous and the crystalline state. These two states can be switched by joule heating on a ns time scale and differ in orders of magnitude in resistance and up to 20 % in reflectivity. Due to this rare combination of properties PCM are one of the most promising candidates for data storage. IPCMs also switch, if a defined voltage is applied. However, experimental and theoretical results indicate that the switching in IPCMs does not rely on a transition between amorphous and crystalline states, but rather between different crystalline states. The switching in IPCMs is faster and needs less energy than classical PCM.
Here, we present superlattices of SnTe and GeTe layers on Si(111) substrate via MBE. One focus of our work lays on the intermixing of the layers and its dependence on the chosen growth temperatures. Therefore we compare results of different methods like TEM, atomprobe tomography, XRD and RHEED for different growth conditions.