Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 15: Thermoelectric and Phase Change Materials
DS 15.4: Talk
Tuesday, March 13, 2018, 12:30–12:45, E 020
Modeling of current-voltage characteristics of BFO based memristors — •Max Huber1,2, Andreas Zienert3, Jörg Schuster2, and Michael Schreiber1 — 1Institute of Physics, Technische Universität Chemnitz, Chemnitz, Germany — 2Fraunhofer Institute for Electronic Nano Systems, Chemnitz, Germany — 3Center for Microtechnologies, Technische Universität Chemnitz, Chemnitz, Germany
Memristors are one of the most promising candidates for next generation memory. They can also be used for nonvolatile logic application, neuromorphic computing and hardware based encryption.
To build high performance devices, one has to know the mechanism behind the resisitive switching. Dependent on the material, the device can show filamentary or interface resistive switching. Despite the increasing interest of the scientific community in studying resistive switching, detailed knowledge of the switching mechanism for many materials is still missing.
We study BiFeO3 (BFO) based memristors which show interface resistive switching. The device is modeled as a serial connection of two head-to-head diodes. To simulate the current-voltage characteristic we solve the drift-diffusion and Poisson’s equation selfconsistently and assume the doping profile is constant in time.