Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Poster Session I

DS 17.12: Poster

Tuesday, March 13, 2018, 18:15–20:15, Poster B

Depletion layer spectroscopy on (010) and (-201) β-Ga₂O₃ single crystals — •Holger von Wenckstern, Rainer Pickenhain, and Marius Grundmann — Universität Leipzig , Felix-Bloch-Institut für Festkörperphysik, Halbleiterphysik, Leipzig

The properties of β-Ga₂O₃ and the possibility of bulk crystal growth by e.g. edge-defined film-fed growth, float-zone and Czochralski method render the material interesting for high-power applications and deep-UV photo detection[1]. The performance of devices is typically limited by defects incorporated during growth and processing. We present a comprehensive investigation of unintentionally doped (-201)- and (010)-oriented β-Ga₂O₃ bulk single crystals grown by edge-defined film-fed growth (Tamura coporation) by thermal admittance spectroscopy TAS and deep-level transient spectroscopy (DLTS). For that coplanar Ohmic and Schottky barrier diodes were fabricated and characterized at room temperature by current-voltage measurements. Comparing the differently oriented crystals revealed differences in the appearance and concentration of deep-level defects and different effective mass-like donors in the freeze-out regime.