Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.16: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
Characterization of transport properties of thin β-GaO layers — •Johannes Boy1, Martin Handwerg1, Robin Ahrling1, Rüdiger Mitdank1, Günter Wagner2, Zbigniew Galazka2, and Saskia F. Fischer1 — 1AG Neue Materialien, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstrasse 15, D-12489 Berlin, Germany — 2Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, D-12489 Berlin, Germany
Gallium oxide has been of great interest as a functional material for high power applications, due to its wide band gap and high breakthrough field. Knowledge about the transport properties of the material is a requirement for the design and production of gallium oxide based electric devices. In this work, homoepitaxially MOVPE-grown Si-doped β-GaO films have been investigated with regard to electric and thermoelectric transport over a wide temperature range. We have designed a measurement platform, which allows us to carry out van-der-Pauw-, Hall- and Seebeck-measurements on the same sample. The Seebeck coefficient S, conductivity σ, Hall carrier density n and Hall mobility µ have been measured in thin films, which have to be distinguished in terms of film thickness, doping concentration and mobility of the charge carrier. Seebeck coefficients in the range of a few hundreds µV/K have been measured at room temperature and below. The measurement of the Seebeck coefficient and Hall carrier density allows a discussion of the temperature-dependent Hall scattering factor rsc in various β-GaO thin films.