Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.22: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
growth mode evolution during (100)-oriented β-ga2o3 homoepitaxy — •zongzhe cheng1, michael hanke1, zbigniew galazka2, and achim trampert1 — 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7 10117 Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
our work focuses on the analytics of (100)-oriented beta-Ga2O3 homoepitaxy as grown by MBE. In-situ reflection high-energy electron diffraction (RHEED) reveals sharp strike patterns that are indicative for a 2D layer-by-layer mode accompanied by a (1*1) surface reconstruction. The crystal structure of the thin film shows a high quality and matches coherently with the substrate underneath, as probed by in-situ synchrotron-based high resolution x-ray diffraction (HRXRD) and azimuthal RHEED maps. In contrast to the substrate, there is a high density of stacking faults and twin domains in the layers found by ex-situ transmission electron microscopy (TEM), which serve as a mark of the layers. The twins form from the coalescence of nucleated islands, which are elongated along b-direction. As monitored by the RHEED oscillations, the layer thickness can be controlled very precisely, therefore making it a good candidate for research and design of 2D electronics.