Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Poster Session I

DS 17.23: Poster

Tuesday, March 13, 2018, 18:15–20:15, Poster B

Resistive switching in memristive CBRAM devices — •Sven Dirkmann¹ and Thomas Mussenbrock² — ¹Ruhr-Universität Bochum, Lehrstuhl für Theoretische Elektrotechnik, 44780 Bochum, Germany — ²BTU Cottbus-Senftenberg, Lehrstuhl für Theoretische Elektrotechnik, 03046 Cottbus, Germany

We report on resistive switching of memristive electrochemical metallization devices (CBRAM) using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiOx/Pt thin layer system. The ion transport model is consistently coupled with solvers for the electric field and thermal diffusion. We show that the model is able to describe not only the formation of conducting filaments but also its dissolution. Furthermore, we calculate realistic current-voltage characteristics and resistive switching kinetics. Finally, we discuss in detail the influence of both the electric field and the local heat on the switching processes of the device. Furthermore, the reset process is discussed in detail.

This work is funded by the German Research Foundation DFG in the frame of Research Unit FOR2093.