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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.23: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
Resistive switching in memristive CBRAM devices — •Sven Dirkmann1 and Thomas Mussenbrock2 — 1Ruhr-Universität Bochum, Lehrstuhl für Theoretische Elektrotechnik, 44780 Bochum, Germany — 2BTU Cottbus-Senftenberg, Lehrstuhl für Theoretische Elektrotechnik, 03046 Cottbus, Germany
We report on resistive switching of memristive electrochemical metallization devices (CBRAM) using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiOx/Pt thin layer system. The ion transport model is consistently coupled with solvers for the electric field and thermal diffusion. We show that the model is able to describe not only the formation of conducting filaments but also its dissolution. Furthermore, we calculate realistic current-voltage characteristics and resistive switching kinetics. Finally, we discuss in detail the influence of both the electric field and the local heat on the switching processes of the device. Furthermore, the reset process is discussed in detail.
This work is funded by the German Research Foundation DFG in the frame of Research Unit FOR2093.