Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.24: Poster
Dienstag, 13. März 2018, 18:15–20:15, Poster B
Devices and Integrated Circuits Based on Amorphous Zinc-Tin-Oxide — •O. Lahr, S. Vogt, Z. Zhang, H. von Wenckstern, and M. Grundmann — Universität Leipzig, Semiconductor Physics Group, Leipzig, Germany
Currently there exists an increasing demand for low cost electronics and novel devices based on sustainable materials. Amorphous zinc-tin-oxide (ZTO) as a promising candidate paves the way for such technology since it only consists of abundant, non-toxic elements and can be deposited at room temperature with tunable charge carrier densities between 1016 cm−3 and 1019 cm−3 as well as mobilities up to 32 cm2/Vs [1].
We present metal-semiconductor field effect transistors (MESFETs) and inverters based on amorphous n-type ZTO channels. The thin films were deposited at room temperature via long throw magnetron sputtering using a target with a 67 % ZnO and 33 % SnO2 composition. On/Off ratios greater than 8 orders of magnitude are achieved for reactively sputtered Pt gate contacts with an 5-10 nm thick insulating i-ZTO layer in-between for rectification ratio enhancement [2]. Corresponding MESFET-based inverters show a peak gain maximum (pgm) up to 330 at VDD=3 V, thus ZTO is a suitable candidate towards more advanced circuits as for instance ring oscillators [3].
Bitter et al., ACS Appl. Materials & Interfaces, 9, 31, 2017.
Schlupp et al., Physica Status Solidi (a), 214, 10, 2017.
Klüpfel et al., Advanced Electronic Materials, 2, 7, 2016.