Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.29: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
Controllable p-doping of wafer-scale few-layer MoxNb1-xS2 — •Tien Tung Luong1, Yen-Teng Ho1, Peng Lu2, Yung-Ching Chu1, Chao An Jong3, Edward Yi Chang1, and Jason C.S. Woo2 — 1National Chiao Tung University, Hsinchu, China, Republic of (ROC) — 2University of California, Los Angeles, Los Angeles, United States — 3National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, China, Republic of (ROC)
Exfoliated monolayer MoS2 shows a great possibility FET for next generation due to the ultra-high carrier confinement. Nevertheless, exfoliation method is not suitable for practical applications on a large scale and disadvantages in controlling layer number and doping. 2D MoS2 can be used in many kinds of application fields, such as low power logic circuits, flexible electronics, sensors, memories and photovoltaic. etc. For integration circuit application, it is important to form p-type channels, Nb is the promising candidate for p-type dopant in MoS2. In this works, a very thin MoOx:Nb film was deposited on a commercial 2-inch sapphire wafer using a co-sputtering and then was sulfurized in H2S ambient at 750 oC to form few-layer MoxNb1-xS2. The effective mobility and effective hole concentration examined by Hall measurement and inferred from a field-effect measurement are strongly dependent both on the Nb power of co-sputtering and on the sulfurization conditions. Within some conditions, the effective mobility drastically increases as increasing the Nb incorporation and consequent the hole concentration in MoxNb1-xS2. The results present a feasible synthesis method for controllable p-doping of wafer-scale few-layer MoxNb1-xS2.