Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.32: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
Local stacking order in few-layer graphene — Fabian Rudolf Geisenhof1, •Felix Winterer1, and Ralf Thomas Weitz1,2 — 1Physics of Nanosystems, Physics Department, Ludwig Maximilians Universität, München, Germany — 2NanoSystems Initiative Munich (NIM) and Center for NanoScience (CeNS), München, Germany
The electronic bandstructure of few-layer graphene depends strongly on the local stacking order. For example, it was shown that in contrast to Bernal stacking, ABC stacking exhibits flat conduction bands. These flat bands could possibly lead to exchange-interaction driven novel states [1,2]. It is, therefore, essential to understand and characterize the local stacking order of few-layer graphene samples.
Here, we investigate the local stacking order of few-layer graphene using Atomic Force Microscopy, Raman Spectroscopy and SNOM Measurements. We discuss the surprising observation that wet processing can transform the local stacking from ABC to ABA stacking order and induce further stacking boundaries while others are straightened out.
[1] R.T. Weitz, M.T. Allen, B.E. Feldman, J. Martin, and A. Yacoby, Broken-symmetry states in doubly gated suspended bilayer graphene, Science 330, 812 (2010)
[2] Y. Nam, D.-K. Ki, M. Koshino, E. McCann and A.F Morpurgo, Interaction-induced insulating state in thick multilayer graphene, 2D Mater. 3 045014 (2016)