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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.40: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
X-ray absorption spectroscopy studies on transition metal dichalcogenide heterostructures — •Florian Rasch1, Sage Bauers2, Gavin Mitchson2, Kyle Hite2, Danielle Hamann2, David Johnson2, Javier Herrero-Martín3, Manuel Valvidares3, Bernd Büchner1,4, and Jorge Hamann-Borrero1 — 1Leibniz Institute for Solid State and Materials Research Dresden, Dresden, Germany — 2Department of Chemistry and Materials Science, University of Oregon, Eugene, oregon, United States — 3ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, Spain — 4Department of Physics, TU Dresden, Dresden, Germany
Over the last years transition metal dichalcogenides (TMDs) have provided a wide playground to study their electronic properties in the crossover from 3D bulk to 2D monolayer structures. A novel way to study the effect of dimensionality on TMDs is given by a new class of materials, i.e. thin film heterostructures with chemical formula (MSe)m/(TSe2)n, where m layers of a monochalcogenide MSe (e.g. M = Pb, Sn) and n layers of a TMD (e.g. T = Nb, V) are altenrately stacked. In these materials the dimensionalities m and n as well as the constituents M and T can be precisely controlled, allowing for systematic studies of the electronic properties as a function of m, n, M and T. Here, we want to introduce these materials and their trends in electrical properties upon tuning the dimensionality and exchanging the constituents. We will discuss details of the electronic structure of (MSe)1/(NbSe2)1 (M = Bi, Sn, Pb) by combining results of x-ray absorption spectroscopy with preliminary bandstructure calculations.