Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 17: Poster Session I

DS 17.54: Poster

Dienstag, 13. März 2018, 18:15–20:15, Poster B

Two-dimensional growth of three-dimensionally bonded GeTe — •Isom Hilmi, Andriy Lotnyk, Jürgen Gerlach, Philipp Schumacher, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e.V., 04318, Leipzig, Germany

In this work, epitaxial thin films of three-dimensionally (3D)-bonded GeTe are grown on a two dimensionally (2D)-bonded ultra-thin Sb2Te3 seeding layer on Si(111) by pulsed laser deposition. The GeTe films are grown in trigonal phase with epitaxial relationships of GeTe(0001) || Sb2Te3(0001) || Si(111) and GeTe[11-20] || Sb2Te3[11-20] || Si[-110]. The use of a seeding layer is shown to extend the epitaxial window towards lower temperature regimes up to 145 °C. Additionally, the surface quality of the GeTe films is also significantly improved. Local structure investigation of the epitaxial films reveals the presence of a superposition of twinned domains, which is assumed to be an intrinsic feature of these thin films. This work paves a way to improve epitaxial growth and film quality of 3D-bonded alloys by the use of 2D-bonded seeding layer.