Berlin 2018 – scientific programme

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DS: Fachverband Dünne Schichten

DS 17: Poster Session I

DS 17.75: Poster

Tuesday, March 13, 2018, 18:15–20:15, Poster B

Investigation of the influence of molecular and atomic nitrogen ion species during thin film growth — •Michael Mensing, Philipp Schumacher, Jürgen W. Gerlach, and Bernd Rauschenbach — Leibniz Institute of Surface Engineering (IOM), Leipzig, Germany

Ion beam assisted deposition enables the control of thin film properties by changing the ion beam parameters such as the ion kinetic energy or the ion flux. However, as a consequence of the utilization of typical ion sources, the ion beam consists of a blend of multiple ion species at distinct ion kinetic energy distributions. In this work, an energy and mass selected ion beam is created and utilized to deposit epitaxial GaN nanofilms on Al₂O₃(1102) at elevated temperatures of up to 700^∘C. This well established material system is used to independently investigate the influence of hyperthermal molecular and atomic nitrogen ions on the resulting film properties during the initial stages of the film growth. In addition, ion energies and material fluxes are varied. The resulting films are characterized by in situ RHEED, in vacuo AES and AFM, XRD as well as XRR.