Berlin 2018 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.76: Poster
Dienstag, 13. März 2018, 18:15–20:15, Poster B
Deposit Transition Metal or Metal Oxides Thin film on Silicon Wafer by Atomic Layer Deposition (ALD) for High Efficient Photoelectrochemical Water Splitting — •Haojie Zhang1, Alexander Sprafke1, Stefan L. Schweizer1, Wouterg A. Maijenburg2, and Ralf Wehrspohn1,3 — 1Institute of Physic, Martin-Luther-University Halle-Wittenberg, Heinrich-Damerow-Strasse 4, 06120 Halle, Germany. — 2Center for Innovation Competence (ZIK) "SiLi-nano", Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Straße 3, 06120 Halle, Germany. — 3Fraunhofer Institute for Microstructure of Materials and Systems, IMWS, Walter-Hülse-Straße 1, 06120 Halle, Germany.
Photoelectrochemical water splitting is advanced by the development of the highly efficient catalysts that promote the performance of the water splitting, while also maintaining the excellent stability for integration with the photoactive semiconductor as the light absorber. Here, we demonstrate the deposition of Ni, Co and/or their oxides thin films on the silicon wafer by the plasma enhanced atomic layer deposition (ALD). The deposited thin film with the uniform properties and simultaneously provide excellent water splitting performance. Furthermore, the combined silicon, as a light absorber also been protected effectively by the deposited thin film to perform a highly efficient light absorb. The combined device provides an excellent performance for the photoelectrochemical water splitting contributed by the synergy effect of high activity deposited thin film and semiconductor.