Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.7: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
Complex-Oxide Acousto-Electronics — •Yigitcan Uzun1, Boris Vratzov2, Alexander E. M. Smink1, and Wilfred G. van der Wiel1 — 1NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands — 2NT&D - Nanotechnology and Devices, Aachen, Germany
Surface acoustic waves (SAWs) are capable of capturing free charge carriers and transporting them along their propagation path, resulting in an acoustoelectric current. So far, acoustoelectric transport has been realized mainly in AlGaAs/GaAs based structures. Here, we intend to realize acoustoelectric transport in the two-dimensional electron system at the LaAlO3/SrTiO3 (LAO/STO) interface. This has been shown to have extraordinary low-temperature properties, such as a high carrier mobility, superconductivity and magnetism. Experiments were carried out in a Pb[ZrxTi1-x]O3(PZT)/LAO/STO tri-layer heterostructure. Initially, a 10 unit cell thick layer of LAO was grown on a TiO2-terminated STO substrate and was patterned in a Hall-bar shape in order to define the SAW path. A 200 nm thick top piezoelectric PZT layer was deposited. SAWs were generated by using interdigital transducers. The SAW resonance frequency was measured by S-parameters analysis and the dependency of the acoustoelectric current on the SAW power was analyzed.