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DS: Fachverband Dünne Schichten
DS 17: Poster Session I
DS 17.81: Poster
Tuesday, March 13, 2018, 18:15–20:15, Poster B
Optical ellipsometry used for real-time monitoring of atomic layer epitaxy — •Fryderyk Lyzwa1,2, Premysl Marsik2, Vladimir Roddatis3, Christian Bernhard2, Markus Jungbauer1, and Vasily Moshnyaga1 — 1I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musée 3, 1700 Fribourg, Switzerland — 3Institut für Materialphysik, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
Nanoscience and modern material physics are based on the growth and study of thin films with thicknesses spreading down to one atomic layer. The monitoring process itself is of great importance in order to confirm the successful film growth and to gain information on the electronic properties, defect formation, interfacial reconstructions etc. already during the growth. In this study, Ruddlesden-Popper thin films of SrO(SrTiO3)n=4 were grown by means of metalorganic aerosol deposition in the atomic layer epitaxy mode on SrTiO3(100), LSAT(100) and DyScO3(110) substrates. An optical ellipsometry setup was used to monitor the deposition of single atomic layers with subatomic sensitivity. The measured time dependences of ellipsometric angles, Δ(t) and Ψ(t), were described by using a simple optical model, considering the sequence of atomic layers SrO and TiO2 with corresponding bulk refractive indices. As a result, valuable online information on the growth process, the film structure and defects were obtained.