Berlin 2018 – scientific programme
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DS: Fachverband Dünne Schichten
DS 18: Optical Analysis of Thin Films (Reflection, Ellipsometry, Raman, IR-DUV Spectroscopy, ...): Session I
DS 18.5: Talk
Wednesday, March 14, 2018, 11:00–11:15, H 0111
Polarization dependent photoluminescence and Raman spectroscopy of single III-nitride nanowires — •Maximilian Ries1,2, Pascal Hille3, Jörg Schörmann3, Eugen Speiser2, Martin Eickhoff3,4, and Norbert Esser1,2 — 1School of Analytical Sciences Adlershof (SALSA), Albert-Einstein-Strasse 5-9, 12489 Berlin — 2Leibniz Institut für Analytische Wissenschaften - ISAS e.V., Schwarzschildstrasse 8, 12489 Berlin — 3Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen — 4Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen
Modern LEDs are frequently made of III-nitride structures, with applications ranging from lightning, optoelectronics to life sciences and health care. To allow excellent performance, complex heterostructures and nanostructures must be fabricated with high precision. Recently, III-nitride nanowires have been employed in sensor devices due to their high surface-to-volume ratio, tunable optical properties and the possibility for surface functionalization. These devices are usually based on arrays of vertically aligned nanowires grown along the c-axis. To suppress ensemble effects and understand the impact of parameters such as alloy composition and morphology on optical properties, we performed polarization dependent measurements of photoluminescence and Raman spectroscopy on single III-nitride nanowires. Combined with transmission and scanning electron microscopy experiments we investigated the nature of defect luminescence and alloy inhomogeneity.