Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 20: 2D materials: Chalcogenides I (joint session HL/DS)

DS 20.10: Vortrag

Mittwoch, 14. März 2018, 12:00–12:15, A 151

Strong Anisotropic Spin-Orbit Interaction Induced in Graphene by Monolayer WS2 — •Taro Wakamura¹, Francesco Reale², Pawel Palczynski², Cecilia Mattevi², Sophie Guéron¹, and Hélène Bouchiat¹ — ¹Laboratoire de Physique des Solides, Université Paris-Sud, Orsay, France — ²Department of Materials, Imperial College London, London, United Kingdom

We demonstrate strong anisotropic spin-orbit interaction in graphene induced by monolayer WS2. Direct comparison between graphene/monolayer WS2 and graphene/bulk WS2 system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy (Eso) more than 10 meV. The dominant z to -z symmetric spin-orbit interaction demonstrates strong valley-Zeeman spin-orbit interaction induced in graphene, consistent with the recent theoretical study. Dramatic increase of resistance around the Dirac point with decreasing temperature suggests the existence of the spin-orbit gap at the Dirac point.