Berlin 2018 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: Lithography II: Focused Electron Beam Induced Processing: 3D Nano-Printing for Material Science (Focussed Session): Afternoon Session (joint session DS/KFM)

DS 23.2: Vortrag

Mittwoch, 14. März 2018, 15:15–15:30, H 2032

Focused Electron Beam Induced Deposition with halogenated organometallic Ru compounds — •Jakub Jurczyk^1,2, Christopher Brewer³, Olivia Hawkins³, Czeslaw Kapusta², Lisa McElwee-White³, and Ivo Utke¹ — ¹Empa - Swiss Federal Laboratories for Materials Science and Technology,Thun, Switzerland — ²AGH University of Science and Technology in Krakow, Kraków, Poland — ³University of Florida, Gainesville, USA

Focused Electron Beam Induced Deposition (FEBID) studies of potential organometallic halogenated ruthenium precursors were performed. By now the best Ru FEBID result was achieved using bis(ethylcyclopentyldienyl) ruthenium(II) [1] giving a C:Ru ratio of 9:1 (10 at.% Ru) in as deposited material. Recent gas phase [2] and surface science studies [3] selected halogenated organometallic compounds as potential FEBID precursors. In this contribution we present three of them: n-allyl-Ru(CO)3Cl, n-allyl-Ru(CO)3Br, n-allyl-Ru(CO)3I. The deposit metal content was investigated as function of growth regimes and writing strategies for vertical and planar structures. First promising results of up to 20 at.% of Ru in as deposited material were achieved. Electrical properties of as deposited and annealed nanowires will be presented.

[1] J.H. Noh et al., App. Phys. A, 117, (2014), 1705-1713 [2] R. M. Thorman et al., Phys. Chem. Chem. Phys, 19, (2017), 13264-13271 [3] Spencer et al., J. Phys. Chem. C, 119, (2015), 15349-15359