Berlin 2018 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 23: Lithography II: Focused Electron Beam Induced Processing: 3D Nano-Printing for Material Science (Focussed Session): Afternoon Session (joint session DS/KFM)
DS 23.7: Vortrag
Mittwoch, 14. März 2018, 16:45–17:00, H 2032
Dedicated AS-ALD micro-reactor for FEBID nano-templates — •Peter Gruszka, Giorgia Di Prima, Roland Sachser, and Michael Huth — Goethe Universität, Max-von-Laue-Str. 1, 60438 Frankfurt am Main, Germany
In recent years, conventional methods of nano-structuring are slowly reaching their lower limits. A novel bottom-up approach emerged[1], which combines focused electron beam induced deposition(FEBID) and area-selective atomic layer deposition(AS-ALD). FEBID is a serial, bottom-up and direct-write technique yielding structures with superior lateral resolution (< 10 nm), but with poor material quality. In contrast, ALD and especially AS-ALD are parallel and bottom-up approaches with exceptional thickness control resulting in high purity sub-nano films.
We successfully performed the combined FEBID-ALD process in our Nova 600 Dual Beam scanning electron microscope.[2] The ALD experiments were conducted on purified platinum FEBID-nanostructures[3] which were monitored via in-situ conductance measurements. For further investigation and optimization, we built a dedicated AS-ALD micro-reactor.
[1] Mackus, et al., J. Appl. Phys 107 (2010), 116102
[2] Di Prima, et al., Nano Futures 1(2) (2017), 25005
[3] Sachser, et al., ACS Appl. Mater. Interfaces 6 (2014), 15868