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DS: Fachverband Dünne Schichten

DS 28: 2D materials: Chalcogenides II (joint session HL/DS)

DS 28.13: Vortrag

Donnerstag, 15. März 2018, 12:45–13:00, A 151

Impact of layer separation on the optoelectronic properties of van der Waals heterostructures — •Malte Hartmann¹, Matthias Florian¹, Alexander Steinhoff¹, Frank Jahnke¹, Julian Klein², Alexander Holleitner², Jonathan Finley², Tim Wehling¹, Michael Kaniber², and Christopher Gies¹ — ¹Institut für theoretische Physik, Bremen, Deutschland — ²Walter Schottky Institut, München, Deutschland

Dielectric screening plays an important role in the field of atomically thin transition-metal dichalcogenides (TMDs) and van der Waals heterostructures consisting of stacked 2D-materials. In each layer the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as binding energies of exciton complexes and can be used to tailor the optoelectronic properties. By combining an electrostatic model for a dielectric hetero-multi-layered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances.